DocumentCode
2322842
Title
Detailed comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting near 1.3 /spl mu/m wavelength
Author
Li, L.H. ; Harmand, J.C. ; Patriarche, G. ; Lemaitre, A. ; Largeau, L. ; Travers, L.
Author_Institution
LPN-CNRS, Paris, France
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
289
Lastpage
290
Abstract
The novel quaternary alloy GaInNAs proposed by Kondow for the realization of GaAs-based long wavelength optoelectronic devices has attracted considerable attention during the last few years. In particular, the successful fabrication and demonstration of 1.3 /spl mu/m vertical cavity surface emitting laser on GaAs substrate has raised this material system as a strong competitor of InP-based material systems.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; laser transitions; photoluminescence; quantum well lasers; semiconductor quantum wells; 1.3 /spl mu/m wavelength; 1.3 micron; GaAs; GaAs substrate; GaAs-based long wavelength optoelectronic devices; GaInNAs-GaAs; GaInNAs-GaNAs-GaAs; GaInNAs/GaAs quantum wells; GaInNAs/GaNAs/GaAs quantum wells; fabrication; photoluminescence; quaternary alloy; vertical cavity surface emitting laser; Electron emission; Gallium arsenide; Plasmas;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037873
Filename
1037873
Link To Document