Title :
A comparison of MBE- and MOCVD-grown InGaAsN
Author :
Ptak, A.J. ; Friedman, D.J. ; Johnston, S.W.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
InGaAsN is a leading candidate for use as a third junction in high-efficiency solar cells, and as a light emitter in the 1.3-1.55 /spl mu/m wavelength range. Despite concentrated effort from many groups over the last several years, material quality continues to be lacking.
Keywords :
III-V semiconductors; MOCVD; MOCVD coatings; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor quantum dots; GaAs; GaAs substrates; InGaAsN; InGaAsN MBE/MOCVD growth comparison; capacitance/temperature measurements; hole trap; metalorganic chemical vapor deposition; molecular-beam epitaxy; trap densities; Capacitance; Electron traps; Gallium arsenide; Interference; MOCVD; Molecular beam epitaxial growth; Nitrogen; Photoluminescence; Photovoltaic cells; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037874
