Title :
InAs/InGaAsN quantum dots emitting at 1.55 micron grown by molecular beam epitaxy
Author :
Ustinov, V.M. ; Egorov, A.Yu. ; Odnoblyudov, V.A. ; Kryzhanovskaya, N.V. ; Nikov, A. F Tsatsul ; Alferov, Zh 1.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
InAs/InGaAsN quantum dots have been grown by molecular beam epitaxy on GaAs substrates. Room temperature photoluminescence (PL) at 1.55 micron has been demonstrated whose intensity was comparable to that of the InGaAsN/GaAs quantum wells emitting at 1.3 micron. The effect of nitrogen concentration on the PL peak position and intensity has been studied.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; 1.3 micron; 1.55 micron; GaAs; GaAs substrates; InAs-InGaAsN; InAs-InGaAsN-GaAs; InAs/InGaAsN quantum dots; PL peak intensity; PL peak position; molecular beam epitaxy; room temperature photoluminescence; Argon; Gallium arsenide; Laser excitation; Molecular beam epitaxial growth; Nitrogen; Quantum dot lasers; Quantum dots; Quantum well lasers; US Department of Transportation;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037876
