Title :
Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 /spl mu/m quantum dot laser
Author :
Paranthoen, C. ; Platz, C. ; Moreau, G. ; Bertru, N. ; Dehaese, O. ; Corre, A. Le ; Miska, P. ; Even, J. ; Folliot, H. ; Labbé, C. ; Simon, J.C. ; Loualiche, S.
Author_Institution :
Lab. de Phys. des Solides, Inst. Nat. des Sci. Appliques, Rennes, France
Abstract :
In recent years, self assembled quantum dots (QDs) have attracted much attention, because of the great potentialities expected from their zero dimensional confinement properties, especially for the realization of opto-electronic devices such as lasers. Indeed, for a QD based laser, a lower temperature dependence (high T/sub 0/), a lower chirp (/spl alpha//sub H/) and a higher modulation bandwidth are predicted compared to the conventional quantum well lasers. Numerous studies have been performed for the growth of InAs/GaAs QDs, and lasers have been realized, presenting improved performances (T/sub 0/=161 K @ 350 K [1], /spl alpha//sub H/=0 @ 1 GHz [2]).
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; substrates; 1.55 micron; GS-MBE; InAs quantum dots; InAs-InP; InP; InP substrate; capping method; excited state transition; gas source molecular beam epitaxy; optical characterizations; opto-electronic devices; quantum dot laser applications; room temperature PL spectra; threshold optical excitation density; Indium phosphide; Laser excitation; Optical filters; Optical pumping; Pump lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Stimulated emission; US Department of Transportation;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037879
