• DocumentCode
    2323000
  • Title

    Growth and microstructure of semi-metallic ErAs particles embedded in an In/sub 0.53/Ga/sub 0.47/As matrix

  • Author

    Driscoll, D.C. ; Hanson, M.P. ; Muller, E. ; Gossard, A.C.

  • Author_Institution
    Dept. of Mater., California Univ., Santa Barbara, CA, USA
  • fYear
    2002
  • fDate
    15-20 Sept. 2002
  • Firstpage
    307
  • Lastpage
    308
  • Abstract
    We report the growth by molecular beam epitaxy of composite epitaxial materials consisting of layers of semimetallic ErAs particles embedded in an In/sub 0.53/Ga/sub 0.47/As matrix. These structures are grown on [100]-oriented semi-insulating InP:Fe substrates at 490/spl deg/C. This material may serve as a fast photoconductor for applications at longer wavelengths than low temperature grown GaAs or ErAs:GaAs. In the ErAs:InGaAs material, the ErAs particles act as fast carrier recombination centers, while the In/sub 0.53/Ga/sub 0.47/As matrix allows for photoexcitation at wavelengths of 1.55 /spl mu/m.
  • Keywords
    III-V semiconductors; carrier lifetime; crystal microstructure; erbium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; particle reinforced composites; photoconducting materials; semiconductor epitaxial layers; semiconductor growth; 1.55 micron; 490 degC; ErAs:InGaAs; ErAs:InGaAs material; In/sub 0.53/Ga/sub 0.47/As matrix; In/sub 0.53/Ga/sub 0.47/As:ErAs; InP:Fe; [100]-oriented semi-insulating InP:Fe substrates; composite epitaxial materials; fast carrier recombination centers; fast photoconductor; growth; microstructure; molecular beam epitaxy; photoexcitation; semi-metallic ErAs particles; wavelengths; Atomic force microscopy; Atomic layer deposition; Composite materials; Gallium arsenide; Indium compounds; Indium gallium arsenide; Microstructure; Photoconducting materials; Rough surfaces; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Molecular Beam Epitaxy, 2002 International Conference on
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7581-5
  • Type

    conf

  • DOI
    10.1109/MBE.2002.1037882
  • Filename
    1037882