Growth and microstructure of semi-metallic ErAs particles embedded in an In/sub 0.53/Ga/sub 0.47/As matrix

We report the growth by molecular beam epitaxy of composite epitaxial materials consisting of layers of semimetallic ErAs particles embedded in an In/sub 0.53/Ga/sub 0.47/As matrix. These structures are grown on [100]-oriented semi-insulating InP:Fe substrates at 490/spl deg/C. This material may serve as a fast photoconductor for applications at longer wavelengths than low temperature grown GaAs or ErAs:GaAs. In the ErAs:InGaAs material, the ErAs particles act as fast carrier recombination centers, while the In/sub 0.53/Ga/sub 0.47/As matrix allows for photoexcitation at wavelengths of 1.55 /spl mu/m.