Title :
A precise model for the DC and transient characteristics of BJTs
Author :
Bayer, M. ; Kraus, R. ; Hoffmann, K.
Author_Institution :
Univ. of Bundeswehr Munich, Neubiberg, Germany
Abstract :
This paper presents a circuit model of a BJT based on the calculation of the charge carrier distribution in the base and in the lightly doped collector layer by approximation of the time derivatives. All important phenomena like transient behaviour, emitter and collector recombination, temperature dependence and conductivity modulation are included. Excellent agreement can be observed between simulations and measurements
Keywords :
bipolar transistors; electrical conductivity; electron-hole recombination; minority carriers; power transistors; semiconductor device models; transients; BJT; DC characteristics; bipolar junction transistor; charge carrier distribution; conductivity modulation; emitter/collector recombination; lightly doped collector layer; power semiconductor devices; simulation; temperature dependence; time derivatives approximation; transient behaviour; transient characteristics; Charge carrier density; Charge carrier processes; Charge carriers; Circuit simulation; Circuits; Conductivity; Equations; Integrated circuit modeling; Radiative recombination; Steady-state; Temperature dependence; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Conference_Location :
Taipei
Print_ISBN :
0-7803-1859-5
DOI :
10.1109/PESC.1994.349748
