Initial stages of CaF/sub 2/ growth and wetting layer formation on Si[001]

Author

Sokolov, N.S. ; Suturin, S.M. ; Ulin, V.P. ; Pasquali, L. ; Selvaggi, G. ; Nannarone, S.

Author_Institution

Ioffe Physico-Tech. Inst., Russia

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

325

Lastpage

326

Abstract

It has been recently found that different types of CaF/sub 2/ nanostructures can be formed on Si[001] substrates depending on the growth conditions. Below 500/spl deg/C, nearly square-shaped dots nucleate on bare Si[001] surface; above 650/spl deg/C, at submonolayer coverage, a so-called "wetting layer" forms. At higher coverage, formation of CaF/sub 2/ stripes of a few nanometers in height and width takes place on top of the wetting layer. Interestingly, CaF/sub 2/ [001]/spl par/ Si[001] in the dots and CaF/sub 2/ [110]/spl par/ Si[001] in the stripes. In this work, initial stages of CaF/sub 2/ epitaxial growth on Si[001] were studied by atomic force microscopy and photoemission spectroscopy with emphasis on formation and chemical composition of the wetting layer.

Keywords

atomic force microscopy; calcium compounds; high-temperature effects; nanostructured materials; nucleation; wetting; 0.1 to 10 nm; 53.7 eV; 56 eV; 90 eV; CaF/sub 2/ [001]/spl par/ Si[001]; CaF/sub 2/ initial growth stages; CaF/sub 2/-Si; Si; bare Si[001] surface; nanostructures; wetting layer formation; Anisotropic magnetoresistance; Atomic force microscopy; Atomic layer deposition; Calcium; Chemical elements; Energy measurement; Kinetic energy; Nanostructured materials; Nanostructures; Photoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037891

Filename

1037891