DocumentCode
2323227
Title
Modelling of power semiconductor devices for use in circuit simulations
Author
Tseng, K.J. ; Palmer, P.R.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear
1994
fDate
20-25 Jun 1994
Firstpage
38
Abstract
The combined use of several modelling techniques and tools to derive realistic models of power semiconductor devices for use in circuit simulations is illustrated using the GTO thyristor as an example. The resulting GTO model uses analytical expressions to describe its internal physics. Direct implementations of these equations in the SPICE and Saber simulators are then used to obtain rigorous comparison of measured and simulated waveforms
Keywords
SPICE; circuit analysis computing; digital simulation; power electronics; semiconductor device models; thyristors; GTO thyristor; SPICE simulator; Saber simulator; circuit simulations; internal physics; measured waveforms; power semiconductor device modelling; simulated waveforms; Analytical models; Circuit simulation; Design automation; Equations; Physics; Power electronics; Power engineering and energy; Power semiconductor devices; SPICE; Semiconductor process modeling; Solid modeling; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Conference_Location
Taipei
Print_ISBN
0-7803-1859-5
Type
conf
DOI
10.1109/PESC.1994.349752
Filename
349752
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