Infrared photodetector by InAs/GaAs quantum dots embedded in modulation doped AlGaAs/GaAs heterostructures

Author

Kim, M.D. ; Noh, S.K. ; Hong, S.C.

Author_Institution

Div. of Chem. Metrol. & Material Evaluation, KRISS, Daejeon, South Korea

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

357

Lastpage

358

Abstract

Most of the structures reported so far utilize vertical transport through stacked self-assembled QDs. However, the unavoidable inhomogeneity in QD size and distribution affect the tunneling transport. As a result, it is said to be difficult to obtain high photoconductive gains in the vertical transport structures. In this work, we have investigated the properties of the lateral transport QDIP, which has a low dark current and a large photoconductive gain.

Keywords

III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; infrared detectors; photoconductivity; photodetectors; semiconductor quantum dots; AlGaAs-GaAs; InAs-GaAs; InAs/GaAs quantum dots; high photoconductive gains; infrared photodetector; large photoconductive gain; lateral transport; low dark current; modulation doped AlGaAs/GaAs heterostructures; vertical transport structures; Atomic force microscopy; Chemical technology; Electrons; Epitaxial layers; Gallium arsenide; Photoconductivity; Photodetectors; Quantum dots; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037907

Filename

1037907