Title :
Observation of blue shifted photoluminescence in stacked InAs/GaAs quantum dots
Author :
Somintac, A. ; Estacio, E. ; Salvador, A.
Author_Institution :
Nat. Inst. of Phys., Univ. of the Philippines, Quezon City, Philippines
Abstract :
Summary form only given. Indium arsenide quantum dots were grown in the Stranski-Krastanov mode using MBE and a GaAs [100] undoped substrate. Samples were grown to investigate the influence of vertical alignment on stacked quantum dots. Photoluminescence experiments at room temperature were performed on the samples.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; spectral line shift; 300 K; GaAs; InAs-GaAs; MBE; Stranski-Krastanov mode; blue shift; photoluminescence; stacked InAs/GaAs quantum dots; vertical alignment; Buffer layers; Cities and towns; Etching; Gallium arsenide; Indium; Physics; Quantum dots; Superlattices; Temperature; US Department of Transportation;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037916
