DocumentCode
2323542
Title
Observation of blue shifted photoluminescence in stacked InAs/GaAs quantum dots
Author
Somintac, A. ; Estacio, E. ; Salvador, A.
Author_Institution
Nat. Inst. of Phys., Univ. of the Philippines, Quezon City, Philippines
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
375
Lastpage
376
Abstract
Summary form only given. Indium arsenide quantum dots were grown in the Stranski-Krastanov mode using MBE and a GaAs [100] undoped substrate. Samples were grown to investigate the influence of vertical alignment on stacked quantum dots. Photoluminescence experiments at room temperature were performed on the samples.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; spectral line shift; 300 K; GaAs; InAs-GaAs; MBE; Stranski-Krastanov mode; blue shift; photoluminescence; stacked InAs/GaAs quantum dots; vertical alignment; Buffer layers; Cities and towns; Etching; Gallium arsenide; Indium; Physics; Quantum dots; Superlattices; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037916
Filename
1037916
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