Title :
Electrical properties of highly Al-doped ZnSe grown by molecular beam epitaxy
Author :
Oh, D.C. ; Chang, J.H. ; Takai, T. ; Song, J.S. ; Kim, J.J. ; Godo, K. ; Park, Y.-G. ; Shindo, K. ; Yao, T.
Author_Institution :
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
Conductivity control is one of the most important issues in wide band gap semiconductors such as ZnSe. Recently, we have reported the successful growth of high carrier concentration n-type ZnSe layers doped with Al. However, the carrier compensation mechanisms and limitation of carrier mobility has not been understood yet. In this work, a series of Al doped ZnSe samples were grown on semi-insulating [001] GaAs substrate by molecular beam epitaxy (MBE). High resolution X-ray diffraction (HRXRD) measurements were performed to investigate the doping induced structural changes. Optical properties of deep/near band emission were investigated by photoluminescence (PL). The electrical properties were investigated by Hall measurement at the elevating temperature.
Keywords :
Hall effect; II-VI semiconductors; X-ray diffraction; aluminium; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; wide band gap semiconductors; zinc compounds; Hall effect; X-ray diffraction; ZnSe:Al; carrier compensation mechanisms; deep/near band emission; doping induced structural changes; electrical properties; high carrier concentration; molecular beam epitaxy; photoluminescence; wide band gap semiconductors; Conductivity; Doping; Gallium arsenide; Molecular beam epitaxial growth; Optical diffraction; Performance evaluation; Substrates; Wide band gap semiconductors; X-ray diffraction; Zinc compounds;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037921
