Title :
Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer
Author :
Takai, Toshiaki ; Chang, Jiho ; Godo, Kenji ; Goto, Takenari ; Yao, Takafumi
Author_Institution :
IMR, Tohoku Univ., Sendai, Japan
Abstract :
Although the application of semiconductor quantum dots to light emitters has been expected, only a few successful achievements have been reported mainly due to the low luminescence efficiency. This paper will report on the strong luminescence of CdTe/ZnSe fractional-monolayer (FM) heterostructures. Various optical-spectroscopic methods are used to investigate the origin of the luminescence in this structure.
Keywords :
II-VI semiconductors; atomic layer epitaxial growth; cadmium compounds; excitons; localised states; monolayers; photoluminescence; zinc compounds; 2.3 to 2.4 eV; 230 to 270 C; 280 C; CdTe-ZnSe; CdTe/ZnSe fractional monolayer structures; localized excitons; luminescence; Atom optics; Atomic layer deposition; Excitons; Light emitting diodes; Luminescence; Photoluminescence; Quantum dots; Stimulated emission; Temperature dependence; Zinc compounds;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037922
