Title :
Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxy
Author :
Bach, P. ; Ruster, C. ; Becker, C.R. ; Schmidt, G. ; Molenkamp, L.W.
Author_Institution :
Dept. Experimentelle Phys. III, Wurzburg Univ., Germany
Abstract :
Electrical spin injection into nonmagnetic semiconductors has attracted much attention recently. While effective spin injection has been achieved using all-semiconductor structures, these devices only work at temperatures below 100 K. For device applications at room temperature however ferromagnetic materials with 100% spin polarization at room temperature are needed.
Keywords :
III-V semiconductors; electron spin polarisation; ferromagnetic materials; gallium arsenide; indium compounds; manganese compounds; molecular beam epitaxial growth; nickel compounds; (In,Ga)As/InP; (InGa)As-InP; NiMnSb; all-semiconductor structures; device applications; electrical spin injection; ferromagnetic materials; half-Heusler alloy NiMnSb; molecular beam epitaxy; nonmagnetic semiconductors; spin polarization; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Polarization; SQUIDs; Spin polarized transport; Substrates; Temperature measurement;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037936
