Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxy

Author

Bach, P. ; Ruster, C. ; Becker, C.R. ; Schmidt, G. ; Molenkamp, L.W.

Author_Institution

Dept. Experimentelle Phys. III, Wurzburg Univ., Germany

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

417

Lastpage

418

Abstract

Electrical spin injection into nonmagnetic semiconductors has attracted much attention recently. While effective spin injection has been achieved using all-semiconductor structures, these devices only work at temperatures below 100 K. For device applications at room temperature however ferromagnetic materials with 100% spin polarization at room temperature are needed.

Keywords

III-V semiconductors; electron spin polarisation; ferromagnetic materials; gallium arsenide; indium compounds; manganese compounds; molecular beam epitaxial growth; nickel compounds; (In,Ga)As/InP; (InGa)As-InP; NiMnSb; all-semiconductor structures; device applications; electrical spin injection; ferromagnetic materials; half-Heusler alloy NiMnSb; molecular beam epitaxy; nonmagnetic semiconductors; spin polarization; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Polarization; SQUIDs; Spin polarized transport; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037936

Filename

1037936

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2323859