DocumentCode
2323907
Title
High quality GaMnAs films grown with As/sub 2/
Author
Campion, R.P. ; Foxon, C.T. ; Gallagher, B.L. ; Edmonds, K.W. ; Zhao, L. ; Wang, K.
Author_Institution
Sch. of Phys. & Astron., Nottingham Univ., UK
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
423
Lastpage
424
Abstract
We have grown GaMnAs films using As/sub 2/ as a function of growth temperature and Mn flux. At high Mn fluxes or high growth temperatures, a three-dimensional (3D) growth mode is observed by reflection high-energy electron diffraction. At lower Mn fluxes or reduced growth temperature a two-dimensional (2D) growth mode is observed.
Keywords
gallium arsenide; magnetic thin films; manganese compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; As/sub 2/; GaMnAs; MBE; Mn flux; growth temperature; high quality GaMnAs films; reduced growth temperature; reflection high-energy electron diffraction; three-dimensional growth mode; two-dimensional growth mode; Annealing; Astronomy; Magnetic films; Magnetic properties; Magnetic semiconductors; Molecular beam epitaxial growth; Optical films; Optical reflection; Physics; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037939
Filename
1037939
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