SPICE model of thyristors with amplifying gate and emitter-shorts

In this work, a new SPICE model is developed for power thyristors, which contains amplifying gate and emitter-shorts. This model is based on the two-dimensional two-transistor circuit model of a thyristor. The authors use Gummel-Poon circuit model that takes into consideration the high injection effects and the conductivity modulation of the low n-doped region. The model parameters are defined and extracted according to a new methodology. The simulation results are compared with experimental measurements. It has been found that the developed model satisfactorily describes the performance of the thyristor under practical operating conditions.