DocumentCode
2324498
Title
On the use of bismuth in quantum wells
Author
Dauscher, A. ; Lenoir, B. ; Boffoué, O. ; Devaux, X. ; Martin-Lopez, R. ; Scherrer, H.
Author_Institution
Lab. de Phys. des Mater., Ecole des Mines, Nancy, France
fYear
1997
fDate
26-29 Aug 1997
Firstpage
429
Lastpage
433
Abstract
A rapid survey of some theoretical considerations concerning the use of multiple quantum well structures (MQWS) in thermoelectricity is given as well as why bismuth can be a prospective material for the development of a new class of thermoelectric systems. Problems arising from Bi film synthesis are discussed, in relation with the preparation of Bi-based MQWS. Some experimental results are reported on pulsed laser deposited Bi films prepared in our laboratory
Keywords
bismuth; pulsed laser deposition; semiconductor quantum wells; semimetallic thin films; thermoelectricity; Bi; Bi film; MQW; multiple quantum well structures; pulsed laser deposit; survey; synthesis; thermoelectric systems; thermoelectricity; Bismuth; Conducting materials; Optical films; Optical materials; Pulsed laser deposition; Quantum mechanics; Quantum well devices; Superlattices; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location
Dresden
ISSN
1094-2734
Print_ISBN
0-7803-4057-4
Type
conf
DOI
10.1109/ICT.1997.667177
Filename
667177
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