DocumentCode :
2325313
Title :
MEMS applied backward-wave oscillator for 0.1 THz
Author :
Baik, Chan-Wook ; Kim, Sun Il ; Hong, Seogwoo ; Lee, SangHun ; Srivastava, Anurag ; So, Jin-Kyu ; Park, Gun-Sik ; Kim, Jong-Min
Author_Institution :
Samsung Adv. Inst. of Technol., Yongin, South Korea
fYear :
2009
fDate :
21-25 Sept. 2009
Firstpage :
1
Lastpage :
1
Abstract :
The microfabrication of a backward-wave oscillator is presented for a compact, high-power source in the terahertz range of electromagnetic spectrum. One of micro-electro-mechanical systems (MEMS) technologies, a deep reactive ion etching (DRIE), was employed and achieved the fully 3-dimensional accuracy of coupled cavities operating at 0.1 THz. The prediction and measurement on the scattering parameter of the interaction circuit showed a good agreement.
Keywords :
backward wave oscillators; microfabrication; micromechanical devices; sputter etching; terahertz wave devices; MEMS technology; backward-wave oscillator; coupled cavity; deep reactive ion etching; electromagnetic spectrum; frequency 0.1 THz; microelectro-mechanical system; microfabrication; scattering parameter measurement; terahertz range; Coupling circuits; Dry etching; Electromagnetic measurements; Electromagnetic spectrum; Extraterrestrial measurements; Gold; Micromechanical devices; Oscillators; Space technology; Submillimeter wave technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
Type :
conf
DOI :
10.1109/ICIMW.2009.5325545
Filename :
5325545
Link To Document :
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