A novel emulator design for phase change memory cell

Author

Ming Hong Ong ; El-Hassan, Nemat H. ; Kumar, T. Nandha ; Almurib, Haider A. F.

Author_Institution

Fac. of Eng., Univ. of Nottingham Malaysia Campus, Kuala Lumpur, Malaysia

fYear

2014

fDate

19-21 Aug. 2014

Firstpage

100

Lastpage

104

Abstract

This paper presents a novel LTSPICE based Phase Change Memory (PCM) cell emulator model, using only off the shelf discrete electronic components. The electrical based model simulates not only the continuous resistance change (as corresponding to amorphous and crystalline phases), but also the temperature profile across the cell during programming, while assessing the impact of the programming time. The designed emulator circuit is able to fully characterize the holding voltage and generate the standard I-V characteristic curve of a PCM cell, and possesses the operational features of an actual PCM element. The simulation results are found to be in close agreement to experimental data.

Keywords

electronic design automation; integrated circuit modelling; phase change memories; I-V characteristic curve; LTSPICE; PCM cell emulator model; discrete electronic components; emulator circuit; phase change memory cell; programming time; Integrated circuit modeling; Mathematical model; Phase change materials; Phase change memory; Programming; Resistance; Switches; Phase Change Memory (PCM); chalcogenide; emulator; non-volatile memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Design (ICED), 2014 2nd International Conference on

Conference_Location

Penang

Type

conf

DOI

10.1109/ICED.2014.7015779

Filename

7015779