DocumentCode :
2325552
Title :
High-speed high-saturation-current InP/In0.53Ga0.47As photodiode with partially depleted absorber
Author :
Li, X. ; Li, N. ; Zheng, X. ; Demiguel, S. ; Campbell, J. ; Tulchinsky, D. ; Williams, K.
Author_Institution :
Texas Univ., Austin, TX, USA
fYear :
2003
fDate :
23-28 March 2003
Firstpage :
338
Abstract :
A high saturation current InGaAs photodiode with a partially depleted absorber is demonstrated. Less than 0.5 dB compression is observed in a 6-μm diameter photodiode ar 20 mA and 45 GHz. The measured responsivity is 0.6 A/W.
Keywords :
III-V semiconductors; indium compounds; optical variables measurement; photodiodes; 20 mA; 45 GHz; 6 micron; InGaAs-InP; high saturation current; lnP/InGaAs photodiode; partially depleted absorber; responsivity measurement; Bandwidth; Indium gallium arsenide; Indium phosphide; Optical signal processing; Photodiodes; Spectroscopy; Thermal conductivity; Thermal management; Wavelength division multiplexing; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
Type :
conf
DOI :
10.1109/OFC.2003.1248115
Filename :
1248115
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2325552
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