• DocumentCode
    2325552
  • Title

    High-speed high-saturation-current InP/In0.53Ga0.47As photodiode with partially depleted absorber

  • Author

    Li, X. ; Li, N. ; Zheng, X. ; Demiguel, S. ; Campbell, J. ; Tulchinsky, D. ; Williams, K.

  • Author_Institution
    Texas Univ., Austin, TX, USA
  • fYear
    2003
  • fDate
    23-28 March 2003
  • Firstpage
    338
  • Abstract
    A high saturation current InGaAs photodiode with a partially depleted absorber is demonstrated. Less than 0.5 dB compression is observed in a 6-μm diameter photodiode ar 20 mA and 45 GHz. The measured responsivity is 0.6 A/W.
  • Keywords
    III-V semiconductors; indium compounds; optical variables measurement; photodiodes; 20 mA; 45 GHz; 6 micron; InGaAs-InP; high saturation current; lnP/InGaAs photodiode; partially depleted absorber; responsivity measurement; Bandwidth; Indium gallium arsenide; Indium phosphide; Optical signal processing; Photodiodes; Spectroscopy; Thermal conductivity; Thermal management; Wavelength division multiplexing; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communications Conference, 2003. OFC 2003
  • Print_ISBN
    1-55752-746-6
  • Type

    conf

  • DOI
    10.1109/OFC.2003.1248115
  • Filename
    1248115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2325552