• DocumentCode
    2325635
  • Title

    Highly reliable wave-guide photodiode with wide bandwidth of 50 GHz at the low operation voltage of -1.5 V

  • Author

    Nakaji, M. ; Ishimura, E. ; Hanamaki, Y. ; Aoyagi, T. ; Mitsui, Y.

  • Author_Institution
    Mitsubishi Electr. Corp., Hyogo, Japan
  • fYear
    2003
  • fDate
    23-28 March 2003
  • Firstpage
    342
  • Abstract
    Wave-guide photodiodes with 50 GHz bandwidth at the low operation bias voltage of -1.5 V are realized, which have life time over 8×107 h at 25 °C by adopting buried structure with semiinsulating InP.
  • Keywords
    III-V semiconductors; buried layers; indium compounds; optical waveguides; photodiodes; -1.5 V; 25 C; 50 GHz; 8×107 hours; InP; buried structure; semiinsulating InP; waveguide photodiode; Absorption; Bandwidth; Frequency; High speed optical techniques; Indium phosphide; Low voltage; Optical receivers; PIN photodiodes; Photoconductivity; Power measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communications Conference, 2003. OFC 2003
  • Print_ISBN
    1-55752-746-6
  • Type

    conf

  • DOI
    10.1109/OFC.2003.1248119
  • Filename
    1248119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2325635