DocumentCode :
2325635
Title :
Highly reliable wave-guide photodiode with wide bandwidth of 50 GHz at the low operation voltage of -1.5 V
Author :
Nakaji, M. ; Ishimura, E. ; Hanamaki, Y. ; Aoyagi, T. ; Mitsui, Y.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fYear :
2003
fDate :
23-28 March 2003
Firstpage :
342
Abstract :
Wave-guide photodiodes with 50 GHz bandwidth at the low operation bias voltage of -1.5 V are realized, which have life time over 8×107 h at 25 °C by adopting buried structure with semiinsulating InP.
Keywords :
III-V semiconductors; buried layers; indium compounds; optical waveguides; photodiodes; -1.5 V; 25 C; 50 GHz; 8×107 hours; InP; buried structure; semiinsulating InP; waveguide photodiode; Absorption; Bandwidth; Frequency; High speed optical techniques; Indium phosphide; Low voltage; Optical receivers; PIN photodiodes; Photoconductivity; Power measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
Type :
conf
DOI :
10.1109/OFC.2003.1248119
Filename :
1248119
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2325635
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