Title :
Modeling of GaAs Schottky diodes for terahertz application
Author :
Tang, A.Y. ; Drakinskiy, V. ; Sobis, P. ; Vukusic, J. ; Stake, J.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
3-D models have been developed to study the series resistance (Rs) at DC and the extrinsic parasitic elements (capacitance and inductance) at high frequencies for a Schottky diode chip. For the Rs study, a comparison with the experimental result has been carried out. High frequency properties and the corresponding S-parameters of the Schottky diode chip are simulated using a 3-D finite element electromagnetic solver. The parasitic elements are then extracted and studied as a function of the diode geometry. The outcome of the studies shows the existence of a significant pad-to-pad capacitance through the semi-insulating substrate which could be improved by implementing tapered shape pads.
Keywords :
III-V semiconductors; S-parameters; Schottky diodes; capacitance; finite element analysis; gallium arsenide; inductance; terahertz wave devices; 3-D finite element electromagnetic solver; GaAs; GaAs Schottky diode chip; S-parameters; extrinsic parasitic elements; pad-to-pad capacitance; semiinsulating substrate; series resistance; tapered shape pad; Circuit simulation; Fingers; Frequency; Gallium arsenide; Geometry; Parasitic capacitance; Scattering parameters; Schottky diodes; Semiconductor process modeling; Solid modeling;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5325563
