Analysis of resistances and transconductance of SiC MESFET considering fabrication parameters and mobility as a function of temperature

In this paper, we have analyzed the resistances (specific on-resistance and drain to source resistance) and transconductance of SiC MESFET. Source diffusion, channel, drift region, epi-layer and substrate resistances those contribute to the specific on-resistance have been analyzed. Effect of change in the junction depth due to post annealing on the implant range parameter is also considered. Half of change in the junction depth is added to the implant range parameter (before annealing). Straggle parameter is changed by diffusion coefficient and annealing time. Temperature dependency of mobility is also considered in all parameters. The variation of transconductance taking the drain to source voltage as a parameter has also been analyzed. Our analysis provides in-depth knowledge about the operation and characteristics of the high-power SiC MESFETs.