Title :
Empirical load-line capacitance models for HEMT
Author :
Leong, Y.C. ; Weinreb, S.
Author_Institution :
Massachusetts Univ., Amherst, MA, USA
Abstract :
Models for describing the gate-source and gate-drain capacitances´ variation along a resistive load line have been proposed. They are charge conservative and consistent with the small-signal model at bias points along the load line. The extraction procedure for the models´ parameters is fast and intuitive. The models can be implemented easily in most circuit simulator programs.
Keywords :
Capacitance; High electron mobility transistors; Microwave field effect transistors; Millimetre wave field effect transistors; Semiconductor device models; HEMT; circuit simulator programs; empirical capacitance models; extraction procedure; gate-drain capacitance variation; gate-source capacitances variation; load-line capacitance models; model parameters extraction; resistive load line; Capacitance; Capacitors; Circuit simulation; Equivalent circuits; FETs; Frequency; HEMTs; Load modeling; Spreadsheet programs; Voltage;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862232
