Design of low-power bandgap reference voltage circuit for Epi-retinal prosthesis

Author

Koushaeian, L. ; Muktamath, V. ; Ghafari, B. ; Goodarzy, F. ; Evans, R. ; Skafidas, E.

Author_Institution

Dept. of Electr. Eng., Univ. of Melbourne, Melbourne, VIC, Australia

fYear

2011

fDate

21-24 Nov. 2011

Firstpage

236

Lastpage

239

Abstract

The proposed low-power bandgap reference voltage circuitry is specially designed for a temperature sensor of a retinal prosthesis. Retinal prosthesises have great potential for restoring vision to patients suffering from age related macular degeneration (AMD) and retinitis pigmentosa (RP). Here a circuit is proposed and implemented on 65 nm IBM CMOS process, which generates a reference of 700 mV from a power supply of the 1.2 V while consuming the 23 μW at room temperature. The proposed bandgap achieves a temperature coefficient (TC) of 16 ppm/°C without trimming for the temperature range (TR) of 20°C to 50°C.

Keywords

CMOS integrated circuits; diseases; eye; integrated circuit design; low-power electronics; prosthetic power supplies; reference circuits; temperature sensors; vision; AMD; IBM CMOS process; RP; age related macular degeneration; epi-retinal prosthesis; low-power bandgap reference voltage circuit; power supply; retinitis pigmentosa; size 65 nm; temperature 20 degC to 50 degC; temperature coefficient; temperature sensor; vision restoration; voltage 1.2 V; voltage 700 mV; Accuracy; CMOS integrated circuits; Photonic band gap; Temperature distribution; Temperature measurement; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Broadband and Biomedical Communications (IB2Com), 2011 6th International Conference on

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4673-0768-0

Type

conf

DOI

10.1109/IB2Com.2011.6217927

Filename

6217927