• DocumentCode
    2325907
  • Title

    A new analytical and broadband method for determining the HBT small-signal model parameters

  • Author

    Bousnina, S. ; Mandeville, P. ; Kouki, Ammar B. ; Surridge, R. ; Ghannouchi, F.M.

  • Author_Institution
    Ecole Polytech., Montreal, Que., Canada
  • Volume
    3
  • fYear
    2000
  • fDate
    11-16 June 2000
  • Firstpage
    1397
  • Abstract
    An original, rigorous and accurate method for the direct extraction of HBT small-signal model parameters is proposed. The main advantage of this method is that a unique and physical-meaningful set of intrinsic parameters is extracted from the measured S-parameters for the whole frequency range of operation. The extraction procedure uses a set of closed form expressions derived without any approximation. In this sense, the extraction method is more accurate and robust in comparison with those employing special test structures or global numerical optimization techniques. Experimental validation on a HBT device with a 2/spl times/25 /spl mu/m emitter was carried out, and excellent results were obtained up to 30 GHz. The calculated data-fitting residual error over 1-30 GHz was less then 2%.
  • Keywords
    Equivalent circuits; Heterojunction bipolar transistors; Microwave bipolar transistors; S-parameters; Semiconductor device models; 1 to 30 GHz; HBT small-signal model parameters; S-parameters; analytical method; broadband method; closed form expressions; direct extraction; parameters extraction; Circuit simulation; Equations; Equivalent circuits; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Optical wavelength conversion; Parameter extraction; Robustness; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest. 2000 IEEE MTT-S International
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-5687-X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2000.862235
  • Filename
    862235