Direct extraction method for internal equivalent circuit parameters of HBT small-signal hybrid-/spl pi/ model

Author

Suh, Y. ; Seok, E. ; Shin, J.-H. ; Kim, B. ; Heo, D. ; Raghavan, A. ; Laskar, J.

Author_Institution

Dept. of Electron. Eng. & Comput. Sci., Yeungnam Univ., Kyongsan, South Korea

Volume

3

fYear

2000

fDate

11-16 June 2000

Firstpage

1401

Abstract

We present a novel and robust direct extraction method for the hybrid-/spl pi/ equivalent circuit model of a HBT. This method can accurately resolve the most important internal parameters from the measured S-parameters, and is not sensitive to the values of parasitic parameters. We derive some analytical expressions for the parameters. These analytical expressions for the hybrid-/spl pi/ equivalent circuit of the HBT ensure robust, fast, and reliable parameter extraction.

Keywords

Equivalent circuits; Heterojunction bipolar transistors; S-parameters; Semiconductor device models; HBT hybrid-/spl pi/ model; HBT small-signal model; direct parameter extraction method; internal equivalent circuit parameters; measured S-parameters; Circuit testing; Data mining; Equations; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Inductance; Parameter extraction; Robustness; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.862236

Filename

862236