DocumentCode
2326172
Title
Dual stack method: A novel approach to low leakage and speed power product VLSI design
Author
Islam, M.S. ; Nasrin, M. Sultana ; Mansur, Nuzhat ; Tasneem, Naila
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear
2010
fDate
18-20 Dec. 2010
Firstpage
89
Lastpage
92
Abstract
The development of digital integrated circuits is challenged by higher power consumption. The combination of higher clock speeds, greater functional integration, and smaller process geometries has contributed to significant growth in power density. Scaling improves transistor density and functionality on a chip. Scaling helps to increase speed and frequency of operation and hence higher performance. As voltages scale downward with the geometries threshold voltages must also decrease to gain the performance advantages of the new technology but leakage current increases exponentially. Today leakage power has become an increasingly important issue in processor hardware and software design. In 65 nm and below technologies, leakage accounts for 30-40% of processor power. In this paper, we propose a new dual stack approach for reducing both leakage and dynamic powers. Moreover, the novel dual stack approach shows the least speed power product when compared to the existing methods.
Keywords
VLSI; leakage currents; low-power electronics; chip functionality; digital integrated circuit; dual stack method; dynamic power; leakage current; leakage power; power density; processor hardware; processor power; software design; speed power product VLSI design; threshold voltage; transistor density; voltages scale; Dual stack; dual V-th; state saving technique; static power reduction;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4244-6277-3
Type
conf
DOI
10.1109/ICELCE.2010.5700560
Filename
5700560
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