• DocumentCode
    2326265
  • Title

    High-speed and low-energy Ternary content addressable memory using two-step comparison and feedback sense amplifier

  • Author

    Ali, Syed Iftekhar ; Islam, M.S.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Islamic Univ. of Technol., Gazipur, Bangladesh
  • fYear
    2010
  • fDate
    18-20 Dec. 2010
  • Firstpage
    93
  • Lastpage
    96
  • Abstract
    This paper presents a match-line architecture to reduce the energy consumption of Ternary content-addressable memory (TCAM) and to increase search speed. The proposed match-line (ML) sensing scheme uses a two-step comparison to filter out most of the mismatched MLs in the first step so that the second step comparison is never activated for those mismatched MLs. Simulation using 130-nm 1.2-V CMOS logic shows more than 50% ML energy reduction potential for mismatched MLs compared to conventional current-race (CR) sensing scheme. Also, feedback in the first stage ML charging and lower resistance in the second stage charging path result in ~25% speed enhancement compared to the CR scheme. Finally, implementation complexity has been kept low by avoiding additional control signals as opposed to many sensing schemes found in the literature.
  • Keywords
    CMOS logic circuits; content-addressable storage; feedback amplifiers; CMOS logic; conventional current-race sensing scheme; energy consumption reduction; feedback sense amplifier; first stage ML charging; low-energy ternary content addressable memory; match-line architecture; size 130 nm; two-step comparison; voltage 1.2 V; content-addressable memory; energy consumption; feedback; segmentation; sense amplifier; sensing scheme; ternary;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering (ICECE), 2010 International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    978-1-4244-6277-3
  • Type

    conf

  • DOI
    10.1109/ICELCE.2010.5700634
  • Filename
    5700634