DocumentCode
2326265
Title
High-speed and low-energy Ternary content addressable memory using two-step comparison and feedback sense amplifier
Author
Ali, Syed Iftekhar ; Islam, M.S.
Author_Institution
Dept. of Electr. & Electron. Eng., Islamic Univ. of Technol., Gazipur, Bangladesh
fYear
2010
fDate
18-20 Dec. 2010
Firstpage
93
Lastpage
96
Abstract
This paper presents a match-line architecture to reduce the energy consumption of Ternary content-addressable memory (TCAM) and to increase search speed. The proposed match-line (ML) sensing scheme uses a two-step comparison to filter out most of the mismatched MLs in the first step so that the second step comparison is never activated for those mismatched MLs. Simulation using 130-nm 1.2-V CMOS logic shows more than 50% ML energy reduction potential for mismatched MLs compared to conventional current-race (CR) sensing scheme. Also, feedback in the first stage ML charging and lower resistance in the second stage charging path result in ~25% speed enhancement compared to the CR scheme. Finally, implementation complexity has been kept low by avoiding additional control signals as opposed to many sensing schemes found in the literature.
Keywords
CMOS logic circuits; content-addressable storage; feedback amplifiers; CMOS logic; conventional current-race sensing scheme; energy consumption reduction; feedback sense amplifier; first stage ML charging; low-energy ternary content addressable memory; match-line architecture; size 130 nm; two-step comparison; voltage 1.2 V; content-addressable memory; energy consumption; feedback; segmentation; sense amplifier; sensing scheme; ternary;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4244-6277-3
Type
conf
DOI
10.1109/ICELCE.2010.5700634
Filename
5700634
Link To Document