DocumentCode :
2326265
Title :
High-speed and low-energy Ternary content addressable memory using two-step comparison and feedback sense amplifier
Author :
Ali, Syed Iftekhar ; Islam, M.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Islamic Univ. of Technol., Gazipur, Bangladesh
fYear :
2010
fDate :
18-20 Dec. 2010
Firstpage :
93
Lastpage :
96
Abstract :
This paper presents a match-line architecture to reduce the energy consumption of Ternary content-addressable memory (TCAM) and to increase search speed. The proposed match-line (ML) sensing scheme uses a two-step comparison to filter out most of the mismatched MLs in the first step so that the second step comparison is never activated for those mismatched MLs. Simulation using 130-nm 1.2-V CMOS logic shows more than 50% ML energy reduction potential for mismatched MLs compared to conventional current-race (CR) sensing scheme. Also, feedback in the first stage ML charging and lower resistance in the second stage charging path result in ~25% speed enhancement compared to the CR scheme. Finally, implementation complexity has been kept low by avoiding additional control signals as opposed to many sensing schemes found in the literature.
Keywords :
CMOS logic circuits; content-addressable storage; feedback amplifiers; CMOS logic; conventional current-race sensing scheme; energy consumption reduction; feedback sense amplifier; first stage ML charging; low-energy ternary content addressable memory; match-line architecture; size 130 nm; two-step comparison; voltage 1.2 V; content-addressable memory; energy consumption; feedback; segmentation; sense amplifier; sensing scheme; ternary;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
Type :
conf
DOI :
10.1109/ICELCE.2010.5700634
Filename :
5700634
Link To Document :
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