A CPW-based 77 GHz frequency tripler MMIC using a 130 nm In0.8GaP/In0.4AlAs/In0.35GaAs MHEMTs

Author

Kim, Youngmin ; Koh, Yumin ; Park, Youngrak ; Seo, Kwangseok ; Kwon, Youngwoo

Author_Institution

Seoul Nat. Univ., Seoul, South Korea

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

An active single-ended 77 GHz frequency tripler MMIC based on a 130 nm In_0.8GaP/In_0.4AlAs/In_0.35GaAs metamorphic high electron mobility transistors (MHEMTs) technology has been developed. The frequency tripler MMIC demonstrates a maximum conversion gain of 1 dB for an input power of 0 dBm with 77 GHz output buffer amplifier and 3 dB output power bandwidth of 10 GHz.

Keywords

III-V semiconductors; MIMIC; aluminium compounds; coplanar waveguides; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave power amplifiers; CPW-based single-ended frequency tripler MMIC; In_0.8GaP-In_0.4AlAs-In_0.35GaAs; MHEMTs; bandwidth 10 GHz; frequency 77 GHz; gain 1 dB; metamorphic high electron mobility transistors; output buffer amplifier; size 130 nm; Bandwidth; Frequency conversion; Gain; Gallium arsenide; HEMTs; MMICs; MODFETs; Power amplifiers; Power generation; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325610

Filename

5325610