Title :
High output power, broadband 28-56 GHz MMIC frequency doubler
Author :
Fager, C. ; Landen, L. ; Zirath, H.
Author_Institution :
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
An active single-ended 28-6 GHz MMIC frequency doubler based on a commercial GaAs HEMT process is presented. The presented doubler is broadband and delivers high output power. At 5 dBm input power, the doubler delivers 6 dBm output power. The 3 dB bandwidth is between 48 GHz and 60 GHz. Suppression of the input frequency is better than 23 dB at the design frequency.
Keywords :
Field effect MIMIC; Frequency multipliers; Gallium arsenide; HEMT integrated circuits; III-V semiconductors; Integrated circuit design; MMIC frequency convertors; Millimetre wave frequency convertors; 28 to 60 GHz; EHF; GaAs; active single-ended doubler; broadband MMIC frequency doubler; commercial GaAs HEMT process; high output power; Bandwidth; Frequency conversion; Local oscillators; MMICs; Millimeter wave technology; Power amplifiers; Power generation; Power harmonic filters; Topology; Voltage;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862280
