DocumentCode :
2326718
Title :
Analytical expression of the three-dimensional potential distribution of a SOI four-gate transistor
Author :
Sayed, Shehrin ; Hossain, Md Iftekhar ; Huq, Rezwanul ; Khan, M. Ziaur Rahman
Author_Institution :
Dept. of Electr. & Electron. Eng., BUET, Dhaka, Bangladesh
fYear :
2010
fDate :
18-20 Dec. 2010
Firstpage :
195
Lastpage :
198
Abstract :
An analytical model is developed to determine the 3-D potential distribution of a fully-depleted silicon-on-insulator (SOI) four-gate transistor (G4-FET). The potential variations along the channel and between the junction-gates are assumed to be parabolic due to short channel effect and presence of MOS gates. Using these assumptions and with necessary boundary conditions, the 3-D Poisson´s equation is solved to formulate the overall expression. The proposed model successfully correlates the four gates of the device and shows excellent agreement with the charge variation along the channel. Slight modification also agrees with the surface potential of a DGFET.
Keywords :
MOSFET; Poisson equation; silicon-on-insulator; 3D Poisson equation; 3D potential distribution; MOS gate; SOI four-gate transistor; analytical expression; analytical model; boundary condition; silicon-on-insulator; three-dimensional potential distribution; DGFET; Short channel effect; peak surface potential; potential distribution; three-dimensional (3D) modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
Type :
conf
DOI :
10.1109/ICELCE.2010.5700661
Filename :
5700661
Link To Document :
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