A physically based compact model for FinFETs on-resistance incorporating quantum mechanical effects

On-resistance is a term that occurs during high frequency switching. In this paper, the analysis of the on-resistance of FinFETs including quantum mechanical effect (QME), contact resistance, accumulation layer resistance, drift resistance and channel resistance is presented. Specific on resistance of FinFET is considered to be the series equivalent of contact resistance, drift resistance, accumulation layer resistance, channel resistance etc. Quantum mechanical effect changes the threshold voltage and thus change on current. So, this effect is considered in resistance modeling.