Gate capacitance modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates

An analytical model for the inversion layer quantization for nanoscale- metal oxide semiconductor field effect transistor (MOSFETs) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The C-V and threshold analysis has been studied using the quantum inversion charge model under three substrate orientations. The results indicate a significant impact of crystal orientation on the various MOS parameters. The results have also been compared with the numerically reported results show good agreement.