Title :
Oxygen-sensing characteristics of nanostructured Al-doped ZnO thin films
Author :
Shafura, A.K. ; Azhar, N.E.A. ; Saurdi, I. ; Mamat, M.H. ; Uzer, M. ; Rusop, M.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
Abstract :
Nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) was prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The oxygen-sensing characteristics were studied by varying the gas flow rate at room temperature. The electrical and structural properties of the films were carried out using current-voltage (IV) measurement, Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM), respectively. The porous nanostructures exhibited good sensitivity, of 73%, in the presence of 50 sccm of O2 flow rate. From this study, it is known that, ZnO thin film that was observed to have porous structure might enhance gas sensing performance.
Keywords :
II-VI semiconductors; aluminium; atomic force microscopy; electric current measurement; field emission electron microscopy; gas sensors; nanofabrication; nanoporous materials; nanosensors; oxygen; scanning electron microscopy; sol-gel processing; spin coating; thin film sensors; voltage measurement; wide band gap semiconductors; zinc compounds; AFM; FESEM; IV measurement; O2; ZnO:Al; atomic force microscopy; current-voltage measurement; electrical property; field emission scanning electron microscopy; gas sensor; nanofabrication; oxygen-sensing characteristics; porous nanostructured thin film; sol-gel spin-coating method; structural property; temperature 293 K to 298 K; Films; Gas detectors; Sensitivity; Temperature measurement; Zinc oxide; electrical properties; nanostructured zinc oxide; oxygen-sensing; structural properties;
Conference_Titel :
Electronic Design (ICED), 2014 2nd International Conference on
Conference_Location :
Penang
DOI :
10.1109/ICED.2014.7015847
