Design optimization of high frequency op amp using 32 nm CNFET

Author

Hoque, Md Nadim Ferdous ; Ahmad, Hasnain ; Reza, Ahmed Kamal ; Mominuzzaman, Sharif Mohammad ; Harun-Ur-Rashid, A.B.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2010

fDate

18-20 Dec. 2010

Firstpage

230

Lastpage

234

Abstract

In this paper high frequency performance of carbon nanotube FET (CNFET) in analog circuit is explored along with the comparison of state-of-the-art CMOS technology in 32 nanometer node. The complete design topology of high gain-high bandwidth op amp is presented here taking into account of optimized gate length, pitch, number of tubes, oxide thickness and chirality. Satisfactory improvement is observed for CNFET over CMOS op amp with about 2.5 fold increase in gain and 4.5 fold increase in unity gain frequency for same transistor gate area. Moreover, comprehensive improvements are seen in case of CMRR, PSRR, offset voltage and transient performance at the expense of power and output resistance. Besides, for low power-low bandwidth application an optimum noise performance is achieved in this design.

Keywords

carbon nanotubes; field effect transistors; operational amplifiers; CMOS op amp; CMOS technology; CNFET; analog circuit; carbon nanotube FET; chirality; design optimization; design topology; high frequency op amp; high gain high bandwidth op amp; optimized gate length; optimum noise performance; size 32 nm; transient performance; unity gain frequency; Carbon nanotube field-effect transistor (CNFET); ballistic; chirality; flicker noise; thermal noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2010 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4244-6277-3

Type

conf

DOI

10.1109/ICELCE.2010.5700670

Filename

5700670