Passive imaging with a highly-sensitive infrared phototransistor

Author

Kajihara, Yusuke ; Komiyama, Susumu ; Nickels, Patrick ; Ueda, Takeji

Author_Institution

Univ. of Tokyo, Tokyo, Japan

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

A scanning confocal long-wavelength infrared (LWIR) microscope has been developed by using a highly-sensitive, novel LWIR detector (charge-sensitive infrared phototransistor) for wavelengths -14.7 mum. Samples and Ge objective lens are placed at room temperature, while other optics including a confocal pinhole, Ge relay lenses, and the detector are cooled down to 4.2 K. Passive LWIR imaging has been achieved with a spatial resolution of 25 mum, which was kept unchanged when the sample surface was covered by a GaAs or Si plate. This work indicates the usefulness of the CSIP for application in passive LWIR microscopy.

Keywords

infrared detectors; infrared imaging; lenses; phototransistors; Ge objective lens; Ge relay lenses; LWIR detector; charge-sensitive infrared phototransistor; confocal pinhole; long-wavelength infrared detector; passive imaging; scanning confocal long-wavelength infrared microscope; temperature 293 K to 298 K; temperature 4.2 K; High-resolution imaging; Infrared detectors; Infrared imaging; Lenses; Microscopy; Optical imaging; Phototransistors; Relays; Spatial resolution; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325643

Filename

5325643