DocumentCode
2326911
Title
Crystal structure and thermoelectric properties of the mixed layered compounds of the (GeTe)m(Bi2Te3)m homologous series
Author
Shelimova, L.E. ; Karpinsky, O.G. ; Kretova, M.A. ; Avilov, E.S. ; Fleurial, J.-P.
Author_Institution
A.A. Baikov Inst. of Metall., Acad. of Sci., Moscow, Russia
fYear
1997
fDate
26-29 Aug 1997
Firstpage
481
Lastpage
484
Abstract
The initial members of the (GeTe)n(Bi2Te3)m homologous series (Ge3Bi2Te6, GeBi2Te 4 and GeBi4Te7 compounds) have been investigated by X-ray diffraction study. A high degree of lattice disorder is found in the melt-grown compounds. The dependences of the a and c/N parameters of the hexagonal lattices (N-number of layers per unit cell) on the cation-to-anion ratio have been analyzed for nGeTe.mBi 2Te3 compounds. These dependences were considered to be very dose to linear. Based on these results, the lattice parameters were evaluated for another member of the homologous series for which experimental data are absent. A strong dependence of thermoelectric properties at 300 K on deviation from stoichiometry has been found for three above-mentioned compounds. All three compounds are characterized by extremely low lattice thermal conductivity which is probably related to the high degree of disorder in the cation sublattice as well as in the anion one
Keywords
X-ray diffraction; bismuth compounds; crystal structure; germanium compounds; lattice constants; semiconductor materials; stoichiometry; thermal conductivity; thermoelectricity; (GeTe)m(Bi2Te3)m homologous series; 300 K; Ge3Bi2Te6; GeBi2Te4; GeBi4Te7; X-ray diffraction; cation-to-anion ratio; crystal structure; hexagonal lattices; lattice disorder; lattice parameters; lattice thermal conductivity; melt-grown compounds; mixed layered compounds; stoichiometry; thermoelectric properties; Atomic layer deposition; Bismuth; Electrons; Laboratories; Lattices; Propulsion; Space technology; Thermal conductivity; Thermoelectricity; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location
Dresden
ISSN
1094-2734
Print_ISBN
0-7803-4057-4
Type
conf
DOI
10.1109/ICT.1997.667190
Filename
667190
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