DocumentCode :
2326911
Title :
Crystal structure and thermoelectric properties of the mixed layered compounds of the (GeTe)m(Bi2Te3)m homologous series
Author :
Shelimova, L.E. ; Karpinsky, O.G. ; Kretova, M.A. ; Avilov, E.S. ; Fleurial, J.-P.
Author_Institution :
A.A. Baikov Inst. of Metall., Acad. of Sci., Moscow, Russia
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
481
Lastpage :
484
Abstract :
The initial members of the (GeTe)n(Bi2Te3)m homologous series (Ge3Bi2Te6, GeBi2Te 4 and GeBi4Te7 compounds) have been investigated by X-ray diffraction study. A high degree of lattice disorder is found in the melt-grown compounds. The dependences of the a and c/N parameters of the hexagonal lattices (N-number of layers per unit cell) on the cation-to-anion ratio have been analyzed for nGeTe.mBi 2Te3 compounds. These dependences were considered to be very dose to linear. Based on these results, the lattice parameters were evaluated for another member of the homologous series for which experimental data are absent. A strong dependence of thermoelectric properties at 300 K on deviation from stoichiometry has been found for three above-mentioned compounds. All three compounds are characterized by extremely low lattice thermal conductivity which is probably related to the high degree of disorder in the cation sublattice as well as in the anion one
Keywords :
X-ray diffraction; bismuth compounds; crystal structure; germanium compounds; lattice constants; semiconductor materials; stoichiometry; thermal conductivity; thermoelectricity; (GeTe)m(Bi2Te3)m homologous series; 300 K; Ge3Bi2Te6; GeBi2Te4; GeBi4Te7; X-ray diffraction; cation-to-anion ratio; crystal structure; hexagonal lattices; lattice disorder; lattice parameters; lattice thermal conductivity; melt-grown compounds; mixed layered compounds; stoichiometry; thermoelectric properties; Atomic layer deposition; Bismuth; Electrons; Laboratories; Lattices; Propulsion; Space technology; Thermal conductivity; Thermoelectricity; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.667190
Filename :
667190
Link To Document :
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