Title :
Low distortion high power GaAs pseudomorphic heterojunction FETs for L/S-band digital cellular base stations
Author :
Takenaka, I. ; Ishikura, K. ; Takahashi, H. ; Asano, K. ; Kanamori, M.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Shiga, Japan
Abstract :
An L/S-band high-power and low-distortion GaAs FET amplifier has been developed. The amplifier employed newly developed GaAs pseudomorphic heterojunction FETs (HJFETs) exhibiting large drain current and small gm3 characteristics. In addition, the output matching circuit was designed to be in short condition for the second harmonic impedance to give the low distortion characteristics. The developed push-pull amplifier demonstrated 51.5 dBm (140 W) output-power with 13 dB linear gain at 2.2 GHz and extremely low IM3 performance of less than -40 dBc at two-tone total output-power of 43 dBm (at Vds=12 V, set Ids=4% Imax). The developed amplifier is suitable for digital cellular base station system applications.
Keywords :
Cellular radio; Code division multiple access; Electric distortion; Field effect MMIC; Gallium arsenide; III-V semiconductors; Impedance matching; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; 13 dB; 140 W; 2.2 GHz; GaAs; IM3 performance; L-band; S-band; digital cellular base stations; drain current; gm3 characteristics; linear gain; low distortion characteristics; output matching circuit; power FETs; pseudomorphic heterojunction FETs; push-pull amplifier; second harmonic impedance; two-tone total output-power; Base stations; Circuits; FETs; Gallium arsenide; Harmonic distortion; Heterojunctions; High power amplifiers; Impedance matching; MESFETs; Power generation;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862308
