Title :
Process simulation of Trench Gate and Plate and Trench Drain SOI NLIGBT with TCAD tools
Author :
Zhang, H.P. ; Sun, L.L. ; Jiang, L.F. ; Ma, L.J. ; Lin, M.
Author_Institution :
Sch. of Electron. & Inf., Hangzhou Dianzi Univ., Hangzhou
fDate :
Nov. 30 2008-Dec. 3 2008
Abstract :
In this paper process simulation of a novel structural Silicon On Insulator (SOI) LIGBT cell with Trench Gate and Field Plate and Trench Drain (TGFPTD) was done in a sequence of advanced SOI CMOS processes with Silvaco TCAD. The simulated results indicate that the proposed TGFPTD SOI LIGBT cell is feasible to be fabricated in advanced SOI CMOS technologies and the vertical channel length of the vertical gate nMOSFET could be reduced to about 170 nm.
Keywords :
insulated gate bipolar transistors; semiconductor process modelling; silicon-on-insulator; technology CAD (electronics); SOI CMOS technology; SOI NLIGBT; TCAD; field plate; lateral insulated gate bipolar transistors; silicon-on-insulator; trench drain; trench gate; vertical channel length; vertical gate nMOSFET; Atmosphere; CMOS process; CMOS technology; Circuit simulation; Etching; Oxidation; Resists; Semiconductor films; Silicon on insulator technology; Substrates; CMOS; LIGBT; SOI; TCAD; TGFPTD; process simulation;
Conference_Titel :
Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on
Conference_Location :
Macao
Print_ISBN :
978-1-4244-2341-5
Electronic_ISBN :
978-1-4244-2342-2
DOI :
10.1109/APCCAS.2008.4746201
