Title :
100 W L-band GaAs power FP-HFET operated at 30 V
Author :
Sakura, N. ; Matsunaga, K. ; Ishikura, K. ; Takenaka, I. ; Asano, K. ; Iwata, N. ; Kanamori, M. ; Kuzuhara, M.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This paper reports an L-band power AlGaAs/GaAs heterostructure FET with a field-modulating plate (FP-HFET), which accomplished 100 W output power with a high power density of 1.16 W/mm at a drain bias voltage of 30 V. The developed FP-HFET is promising for achieving improved performance and reduced size of digital cellular base station systems.
Keywords :
Aluminium compounds; Cellular radio; Gallium arsenide; III-V semiconductors; Power field effect transistors; Semiconductor device breakdown; Semiconductor device reliability; UHF field effect transistors; 100 W; 30 V; AlGaAs-GaAs; L-band; digital cellular base station systems; drain bias voltage; field-modulating plate; heterostructure FET; output power; power FP-HFET; power density; Circuit testing; Electrodes; FETs; Gallium arsenide; L-band; Laboratories; Packaging; Passivation; Power generation; Voltage;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862309
