Design of resonant tunneling barriers for reduction in the dark current in quantum dots-in-a-well infrared photodetectors

Author

Barve, A.V. ; Shao, J. ; Sharma, Y. ; Sankalp, K. ; Lee, S.J. ; Noh, S.K. ; Krishna, S.

Author_Institution

Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

Reduction in the dark current and wavelength selective extraction of the photocarriers in a quantum dots in a well structure using resonant tunneling barriers has been demonstrated. The passband of the two resonant tunneling barriers has been designed to extract longwave and midwave peaks respectively. Substantial reduction in the dark currents and increase in the detectivity has been obtained.

Keywords

infrared detectors; photodetectors; resonant tunnelling; semiconductor quantum dots; semiconductor quantum wells; dark current; quantum dots-in-a-well infrared photodetectors; resonant tunneling barriers; wavelength selective extraction; Dark current; Eigenvalues and eigenfunctions; Gallium arsenide; Materials science and technology; Passband; Photoconductivity; Photodetectors; Quantum dots; Resonant tunneling devices; Stationary state;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325678

Filename

5325678