DocumentCode :
2327194
Title :
Multi-megawatt X-band semiconductor microwave switches
Author :
Tamura, F. ; Tantawi, S.G.
Author_Institution :
Linear Accel. Center, Stanford Univ., Menlo Park, CA, USA
Volume :
3
fYear :
2000
fDate :
11-16 June 2000
Firstpage :
1731
Abstract :
We present the concepts for high power semiconductor RF switches, designed to handle 100 MW-order signal at X-band. Also we describe an abstract design methodology, and derive a general scaling law for these switches. The design and experimental study of a switch operating at TE/sub 01/ mode in over-moded circular waveguides is discussed. The switch is composed of array of tee junction elements that have a PIN/NIP diode array window in the third arm.
Keywords :
Arrays; Microwave switches; Power semiconductor switches; p-i-n diodes; 100 MW; PIN/NIP diode array window; SPDT switch; TE/sub 01/ mode; X-band switches; design methodology; general scaling law; high power RF switches; multi-megawatt microwave switches; over-moded circular waveguides; semiconductor microwave switches; tee junction array; tee junction elements; Linear accelerators; Phase shifters; Phased arrays; Power semiconductor switches; Radio frequency; Reflection; Semiconductor diodes; Signal design; Voltage; Waveguide junctions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-5687-X
Type :
conf
DOI :
10.1109/MWSYM.2000.862313
Filename :
862313
Link To Document :
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