DocumentCode
2327194
Title
Multi-megawatt X-band semiconductor microwave switches
Author
Tamura, F. ; Tantawi, S.G.
Author_Institution
Linear Accel. Center, Stanford Univ., Menlo Park, CA, USA
Volume
3
fYear
2000
fDate
11-16 June 2000
Firstpage
1731
Abstract
We present the concepts for high power semiconductor RF switches, designed to handle 100 MW-order signal at X-band. Also we describe an abstract design methodology, and derive a general scaling law for these switches. The design and experimental study of a switch operating at TE/sub 01/ mode in over-moded circular waveguides is discussed. The switch is composed of array of tee junction elements that have a PIN/NIP diode array window in the third arm.
Keywords
Arrays; Microwave switches; Power semiconductor switches; p-i-n diodes; 100 MW; PIN/NIP diode array window; SPDT switch; TE/sub 01/ mode; X-band switches; design methodology; general scaling law; high power RF switches; multi-megawatt microwave switches; over-moded circular waveguides; semiconductor microwave switches; tee junction array; tee junction elements; Linear accelerators; Phase shifters; Phased arrays; Power semiconductor switches; Radio frequency; Reflection; Semiconductor diodes; Signal design; Voltage; Waveguide junctions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.862313
Filename
862313
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