Title :
Modeling source inductance in FETs
Author :
Farias, D. ; Rose, F. ; Selin, J.R.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
An analytical model for the calculation of FET source inductance is presented. This model is based on equations for self and mutual inductance of straight conductors and cylindrical via holes derived from Maxwell´s equations. It provides designers with a tool to analytically scale source inductance for different FET structures.
Keywords :
Inductance; Microwave field effect transistors; Semiconductor device models; FET structures; Maxwell equations; analytical model; cylindrical via holes; mutual inductance; self inductance; source inductance modelling; source inductance scaling; straight conductors; Analytical models; FETs; Fingers; Image segmentation; Inductance; Inductors; MMICs; Maxwell equations; Strips; Voltage;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862327
