Observation of room temperature THz emission based on photoluminescence from Ge

Author

Kimura, Mitsuteru ; Balasekaran, Sundararajan ; Tanabe, Tadao ; Oyama, Yutaka ; Shibata, Jiro ; Nishizawa, Jun-ichi

Author_Institution

Fac. of Eng., Tohoku-Gakuin Univ., Tagajo, Japan

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

Room temperature terahertz (THz) emissions were observed from a single crystalline germanium (Ge) by photoluminescence mechanism. The emission mechanism can be explained by intracenter transition of antimony impurities in n-Ge. The emission spectrum contains two peaks corresponding to the 2Pplusmn rarr1S (T,A) (about 8.28 meV; 149.6mum), and 3P0 rarr1S (T,A) (about 7.45 meV; 166.3 mum) intra-center antimony transitions in n-Ge¹.

Keywords

antimony; elemental semiconductors; germanium; impurities; photoluminescence; terahertz wave spectra; Ge:Sb; antimony impurities; emission spectrum; intracenter antimony transitions; intracenter transition; photoluminescence; room temperature terahertz emission; single crystalline germanium; temperature 293 K to 298 K; Bolometers; Laser excitation; Light emitting diodes; Optical filters; Optical mixing; Photoluminescence; Quantum cascade lasers; Silicon; Temperature; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325709

Filename

5325709