General accuracy considerations of microwave on-wafer silicon device measurements

Author

Kolding, T.E.

Author_Institution

RF Integrated Syst. & Circuits Group, Aalborg Univ., Denmark

Volume

3

fYear

2000

fDate

11-16 June 2000

Firstpage

1839

Abstract

This paper gives a general treatment of problems encountered when conducting microwave on-wafer measurements on devices fabricated on silicon substrates. First, issues specific to low-resistivity substrates and low-conductance metallization are detailed. This treatment includes probing reliability, contact resistance, leakage effects, and substrate coupling. Next, some widely disputed subjects of on-wafer measurements are assessed and novel techniques for verifying measuring accuracy are proposed.

Keywords

Contact resistance; Integrated circuit testing; Leakage currents; MMIC; Measurement errors; Microwave measurement; Reliability; Silicon; Si; Si substrates; contact resistance; leakage effects; low-conductance metallization; low-resistivity substrates; measurement accuracy; microwave on-wafer measurements; on-wafer Si device measurements; probing reliability; substrate coupling; Conductivity; Electrical resistance measurement; Integrated circuit measurements; Metallization; Microwave devices; Microwave measurements; Radio frequency; Silicon devices; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.862338

Filename

862338