DocumentCode :
2327570
Title :
Growth rate modeling of boron doped silicon micro needle grown by VLS mechanism
Author :
Hasan, Kamrul ; Islam, Md Shofiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol. (BUET), Dhaka, Bangladesh
fYear :
2010
fDate :
18-20 Dec. 2010
Firstpage :
392
Lastpage :
395
Abstract :
The modeling of the growth rate of boron doped silicon micro needle grown at low temperature by vapour-liquid-solid (VLS) mechanism is reported in this paper. Intrinsic silicon micro needle can be doped by conventional diffusion process at 1100°C after VLS growth but in this work in-situ doping is used which requires lower temperature at around 700°C. Experimental data shows that the incorporation of doping into VLS system changes the properties of the micro needle compared to the intrinsic one. The mathematical model of the growth rate of silicon micro needle proposed in this paper is supported by the experimental values and a complete theoretical analysis is also included. These models will be useful to predict the length of the needle to be required for certain application.
Keywords :
boron; crystal growth from vapour; diffusion; elemental semiconductors; needles; semiconductor doping; semiconductor growth; silicon; Si:B; boron doped silicon microneedle; diffusion; growth rate; in-situ doping; temperature 1100 degC; vapour-liquid-solid mechanism; Silicon micro needle; Vapor-liquid-solid; in-situ doping; intrinsic; mathematical model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
Type :
conf
DOI :
10.1109/ICELCE.2010.5700711
Filename :
5700711
Link To Document :
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