Title :
Effects of microstructure of low temperature grown GaAs films on the properties of terahertz wave detection
Author :
Jeong, Se Young ; Kang, Seung Beom ; Kwak, Min Hwan ; Kim, Sungil ; Ryu, Han Cheol ; Kang, Dae Won ; Choi, Sang Kuk ; Kang, Kwang-Yong ; Kim, Dojin ; Paek, Mun-Cheol
Author_Institution :
Tera-Electron. Device Res. Team, Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
Effects of microstructure of molecular beam epitaxially grown GaAs films at low temperature on the properties of terahertz detection have been investigated. Microstructural changes of the films before and after in-situ annealing strongly influence the terahertz wave SNRs in the receiver. The films grown at 150degC and in-situ annealed at 600degC showed a poly- crystalline state, and those grown at 250degC or higher temperature and in-situ annealed at 600degC revealed epitaxial GaAs layers including As-rich precipitates. The SNRs of the terahertz wave were measured to be 103 to 104. The best value of the SNR 104 was obtained with the polycrystalline GaAs layer.
Keywords :
III-V semiconductors; annealing; crystal microstructure; gallium arsenide; molecular beam epitaxial growth; precipitation; semiconductor epitaxial layers; terahertz wave detectors; GaAs; annealing; epitaxial layers; low temperature grown films; microstructure effects; molecular beam epitaxial growth; precipitates; receiver; temperature 150 C; temperature 250 C; temperature 600 C; terahertz wave SNR; terahertz wave detection; Annealing; Atomic force microscopy; Dipole antennas; Gallium arsenide; Microstructure; Molecular beam epitaxial growth; Optical transmitters; Surface emitting lasers; Temperature; Ultrafast optics;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5325725
