Analysis of zero-bias resistance area product for InGaSb PIN Photodiodes

This paper represents a model of zero-bias resistance area product of InGaSb PIN photodiodes grown on InGaSb metamorphic layer through the analysis of surface leakage and bulk current components of these photodiodes. The model is further developed by considering effects of dislocation density in the diodes. Different optoelectronic properties of the material are extracted by fitting the obtained models with experimental data, such as the values of electron and hole diffusion lengths (L_n and L_p), surface recombination velocity inside the material and at the exposed mesa edges (S_n and s) are found to be 70.34 μm, 6.44 μm, 2.2584 × 10² cm/s and 4.1195 × 10⁵ cm/s, respectively. The extracted dislocation density is 6.67 × 10⁸ cm^-2 which is nearly close to the measured value of ~2 - 5 × 10⁸ cm^-2 for this type of photodiodes.