Title :
Terahertz Raman laser from silicon doped by arsenic
Author :
Hübers, H.W. ; Pavlov, S.G. ; Böttger, U. ; Hovenier, J.N. ; Abrosimov, N.V. ; Riemann, H. ; Zhukavin, R.Kh. ; Shastin, V.N. ; Redlich, B. ; Van der Meer, A. F G
Author_Institution :
Inst. of Planetary Res., German Aerosp. Center (DLR), Berlin, Germany
Abstract :
Stimulated Raman emission at frequencies ranging from 4.8 THz to 5.1 THz and from 5.9 THz to 6.5 THz has been realized by optical excitation of arsenic donors in silicon. The Stokes shift is 5.42 THz, which is equal to the Raman-active donor electronic transition between the 1s(A1) ground state and the excited 1s(E) state. In addition, intracenter donor lasing has been observed when pumping on the dipole-forbidden 1s(A1)rarr2s transition.
Keywords :
arsenic; elemental semiconductors; silicon; stimulated Raman scattering; terahertz wave spectra; Raman-active donor electronic transition; Si:As; Stokes shift; dipole-forbidden 1s(A1)rarr2s transition; frequency 4.8 THz to 5.1 THz; frequency 5.9 THz to 6.5 THz; ground state; intracenter donor lasing; optical excitation; stimulated Raman emission; terahertz Raman laser; Free electron lasers; Frequency; Lattices; Light scattering; Optical pumping; Optical scattering; Physics; Pump lasers; Raman scattering; Silicon;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5325734
