Designing of a neuron MOS current mirror with a transimpedance amplifier

In this paper, we proposed a neuron MOS current mirror with a transimpedance amplifier. A conventional circuit is composed of a voltage amplifier and resistances. However, the resistance voltage drop makes operating range narrow. A proposed circuit is composed of a transimpedance amplifier. And the proposed circuit has high current copy accuracy and wide operating range. The proposed circuit is designed by using the device parameter of the standard CMOS 1.2 mum process. The performance of the proposed circuit is evaluated by HSPICE simulation. Simulation results show that the proposed circuit has better current copy accuracy and lower voltage operation. And the circuit saturation region V_out is 0.4[V] and over.